Finite element modeling of the interaction of laser-generated ultrasound with a surface-breaking notch in an elastic plate

The interaction of surface acoustic waves generated by laser line source in the thermoelastic regime with surface notches are investigated. The finite element method is used to establish the model of the transient displacement field for surface notches with various depths and orientation. The magnitude of the signal enhancement in the near field and the mechanism by which this occurs are explained. The positions of notches were evaluated by the reflected Rayleigh wave. The depths and orientations of the notches were also determined using a shear wave that was generated through mode conversion of a surface acoustic wave at the notch tip. The results agree with previously published experimental measurements.     

Measuring thickness change of transparent plate by electronic speckle pattern interferometry and digital image correlation

The thickness change of transparent plates was measured by electronic speckle pattern interferometry (ESPI) method and digital image correlation (DIC) method. An out-of-plane ESPI system was developed based on the Michelson interferometer, and a new thickness measurement method was designed, which is on the basis of Snell's law of refraction and DIC. The main principles and experimental procedures of these two methods were presented. The thickness change of polymethyl specimens under uniaxial tensile loading were measured by the optical techniques and compared with each other. The results reveal that the data obtained with DIC method achieve better linearity than ESPI.     

Optical switch with low-phase transition temperature based on thin nanocrystalline VOx film

An optical switch is fabricated by using micromachining technology, which is based on thin nanocrystalline vanadium oxide (VO_x) film, and it consists of four layers: a silicon (Si) substrate layer, a VO_x layer, a Si₃N₄ buffer layer, and an aurum (Au) electrode layer. By applying a switching power supply to a pair of the Au electrodes, the optical switch is controlled to exhibit from an “on” state with semi-conducting phase to an “off” state with metallic phase. The optical switch performance is investigated, and testing results show that its extinction ratio is about 14 dB, its switching response time can achieve about 1.5 ms, and the power dissipation required for stimulating switching to work can be below about 15 mW at least, which is lower than the power dissipation of conventional optical switches based on microstructure thin vanadium dioxide (VO₂) films. This kind of optical switch is potential to be applied as optical switch for optical communication.     

Room-temperature ferromagnetism of Cu-doped ZnO films probed by soft X-ray magnetic circular dichroism

We report direct evidence of room-temperature ferromagnetic ordering in O-deficient ZnO:Cu films by using soft x-ray magnetic circular dichroism and x-ray absorption. Our measurements have revealed unambiguously two distinct features of Cu atoms associated with (i) magnetically ordered Cu ions present only in the oxygen-deficient samples and (ii) magnetically disordered regular Cu2+ ions present in all the samples. We find that a sufficient amount of both oxygen vacancies (V(O)) and Cu impurities is essential to the observed ferromagnetism, and a non-negligible portion of Cu impurities is uninvolved in the magnetic order. Based on first-principles calculations, we propose a microscopic "indirect double-exchange" model, in which alignments of localized large moments of Cu in the vicinity of the V(O) are mediated by the large-sized vacancy orbitals.     

Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells

We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility ～3×10? cm2/V s) GaAs/AlGaAs quantum wells (QWs) under millimeter wave irradiation and a weak magnetic field. Such a spike is superposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO) but having an amplitude >300% of the MIRO, and a typical FWHM ～50 mK, comparable with the Landau level width. Systematic studies show a correlation between the spike and a pronounced negative magnetoresistance in these QWs, suggesting a mechanism based on the interplay of strong scatterers and smooth disorder. Alternatively, the spike may be interpreted as a manifestation of quantum interference between the quadrupole resonance and the higher-order cyclotron transition in well-separated Landau levels.     

Evidence for ψ' decays into γπ0 and γη

The decays ψ'→γπ(0), γη and γη' are studied using data collected with the BESIII detector at the BEPCII e(+)e(-) collider. The processes ψ'→γπ(0) and ψ'→γη are observed for the first time with signal significances of 4.6σ and 4.3σ, respectively. The branching fractions are determined to be B(ψ'→γπ(0))=(1.58±0.40±0.13)×10(-6), B(ψ'→γη)=(1.38±0.48±0.09)×10(-6), and B(ψ'→γη')=(126±3±8)×10(-6), where the first errors are statistical and the second ones systematic.     

Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templates

Several non-polar a-plane GaN films had been grown by hydride vapor phase epitaxy (HVPE) on different designed metal organic chemical deposition (MOCVD) GaN templates, which exhibited various ridge-like sidewall facets surface morphologies. The templates induced a lateral growth at the early stage of the HVPE growth, and resulted in a kind of maskless epitaxy lateral overgrown (ELO) process. It is found that the dislocation reduced differently along [1 0 0 0] and [] directions in these HVPE a-plane GaN layers. In [0 0 0 1] direction, the dislocation reduction resulted from the optimal surface roughness value of the template. In [] direction, the inclined facet might be a main factor for the dislocation reduction in HVPE-GaN films. The maskless ELO process had a significant influence on decreasing the dislocation density.     

Crystallization of 21.25Gd2O3-63.75MoO3-15B2O3 glass induced by femtosecond laser at the repetition rate of 250 kHz

We report the formation of β′-Gd₂(MoO₄)₃ (GMO) crystal on the surface of the 21.25Gd₂O₃-63.75MoO₃-15B₂O₃ glass, induced by 250 kHz, 800 nm femtosecond laser irradiation. The morphology of the modified region in the glass was clearly examined by scanning electron microscopy (SEM). By micro-Raman spectra, the laser-induced crystals were confirmed to be GMO phases and it is found that these crystals have a strong dependence on the number and power of the femtosecond laser pulses. When the irradiation laser power was 900 mW, not only the Raman peaks of GMO crystals but also some new peaks at 214 cm⁻¹, 240 cm⁻¹, 466 cm⁻¹, 664 cm⁻¹ and 994 cm⁻¹which belong to the MoO₃ crystals were observed. The possible mechanisms are proposed to explain these phenomena.     

电子结构计算的数值方法与理论

第一原理电子结构计算已成为探索与研究物质机理、理解与预测材料性质的重要手段和工具.虽然第一原理电子结构计算取得了巨大的成功,但是如何利用高性能计算机又快又好地计算大规模体系,如何从数学角度理解电子结构模型的合理性与计算的可靠性和有效性,依然充满各种挑战.基于密度泛函理论的第一原理电子结构计算的核心数学模型为Kohn-Sham方程或相应的Kohn-Sham能量泛函极小问题.近年来,人们分别从非线性算子特征值问题的高效离散及Kohn-Sham能量泛函极小问题的最优化方法设计两个方面对电子结构计算的高效算法设计及分析展开了诸多研究.本文重点介绍我们小组在电子结构计算的方法与理论方面的一些进展,同时简单介绍该领域存在的困难与挑战.     

An Accelerated Three-Term Conjugate Gradient Method with Sufficient Descent Condition and Conjugacy Condition

An accelerated three-term conjugate gradient method is proposed, in which the search direction can satisfy the sufficient descent condition as well as extended Dai–Liao conjugacy condition. Different from the existent methods, a dynamical compensation strategy in our proposed method is considered, that is Li–Fushikuma-type quasi-Newton equation is satisfied as much as possible, otherwise, to some extent, the singular values of iteration matrix of search directions will adaptively clustered, which substantially benefits acceleration the convergence or reduction in the condition number of iteration matrix. Global convergence is established under mild conditions for general objective functions. We also report some numerical results to show its efficiency.